DatasheetsPDF.com

MRF187R3

Part Number	MRF187R3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jan 2, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode ...
Datasheet	MRF187R3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.
0 GHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series...

Similar Datasheet

MRF187 RF POWER FIELD EFFECT TRANSISTORS - Motorola
MRF187R3 RF POWER FIELD EFFECT TRANSISTORS - Motorola
MRF187SR3 RF POWER FIELD EFFECT TRANSISTORS - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)