Part Number
|
IRF1010EZS |
Manufacturer
|
International Rectifier |
Description
|
AUTOMOTIVE MOSFET |
Published
|
Jan 24, 2006 |
Detailed Description
|
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
A...
|
Datasheet
|
IRF1010EZS
|
Overview
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G
VDSS = 60V RDS(on) = 8.
5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extr...
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