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IRF1010EZ

International Rectifier
Part Number IRF1010EZ
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Jan 24, 2006
Detailed Description PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D A...
Datasheet PDF File IRF1010EZ PDF File

IRF1010EZ
IRF1010EZ

Overview
PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.
5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 75A TO-220AB IRF1010EZ D2Pak IRF1010EZS TO-262 IRF1010EZL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max.
84 60 75 340 140 0.
90 ± 20 99 180 See Fig.
12a,12b,15,16 -55 to + 175 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) Typ.
––– 0.
50 ––– ––– Max.
1.
11 ––– 62 40 Units °C/W j HEXFET® is a registered trademark of International Rectifier.
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