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SPP11N60CFD

Power Transistor

Description

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge SPP11N60CFD VDS @ Tjmax 650 V RDS(on) 0.44 Ω ID 11 A PG-TO220 Type Package SPP11N60CFD PG-T...


Infineon Technologies

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