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SPP11N60CFD

Infineon Technologies
Part Number SPP11N60CFD
Manufacturer Infineon Technologies
Description Power Transistor
Published Feb 24, 2006
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPP11N60CFD PDF File

SPP11N60CFD
SPP11N60CFD

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge SPP11N60CFD VDS @ Tjmax 650 V RDS(on) 0.
44 Ω ID 11 A PG-TO220 Type Package SPP11N60CFD PG-TO220 Ordering Code Q67040-S4618 Marking 11N60CFD Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C T C = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID = 5.
5 A, VDD = 50 V ID puls EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Reverse diode dv/dt dv/dt IS=11A, VDS=480V, Tj=125°C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS VGS Ptot Tj , Tstg Rev.
2.
6 Page 1 Value Unit A 11 7 28 340 mJ 0.
6 11 A 40 V/ns ±20 V ±30 125 W -55.
.
.
+150 °C 2007-08-30 SPP11N60CFD Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C Maximum diode commutation speed VDS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.
6 mm (0.
063 in.
) from case for 10s Symbol dv/dt di F/dt Value 80 600 Unit V/ns A/µs Symbol RthJC RthJA T sold Values Unit min.
typ.
max.
- - 1 K/W - - 62 - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.
25mA 600 - Drain-Source avalanche V (BR)DS VGS=0V, ID=11A - 700 breakdown voltage -V - Gate threshold voltage V GS(th) ID=500µΑ, VGS=VDS 3 4 5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, µA Tj=25°C, - 1.
1 - Tj=150...


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