DatasheetsPDF.com

MRF5812G

Part Number	MRF5812G
Manufacturer	Advanced Power Technology
Description	Bipolar Junction Transistor
Published	Mar 23, 2006
Datasheet	MRF5812G

Features

• 
• 
• 
• Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package

SO-8
R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units

DESCRIPTION: Designed for high current, low ...

Similar Datasheet

MRF581 NPN SILICON RF TRANSISTOR - ASI
MRF581 HIGH FREQUENCY TRANSISTOR - Motorola
MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi
MRF581 RF and Microwave Discrete Low Power Power Transistors - Advanced Power Technology
MRF5811LT1 NPN Silicon High Frequency Transistor - Motorola
MRF5812 NPN Silicon RF Microwave Transistor - ASI
MRF5812 Bipolar Junction Transistor - Advanced Power Technology
MRF5812G Bipolar Junction Transistor - Advanced Power Technology
MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi
MRF581A RF and Microwave Discrete Low Power Power Transistors - Advanced Power Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)