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MRF581/MRF581A
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
• • • • Low Noise - 2.
5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.
5 dB @ 500 MHz Ftau - 5.
0 GHz @ 10v, 75mA Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.
0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.
5 200 MRF581A 15 Unit Vdc Vdc Vdc mA
Thermal Data
P
D D Total Device Dissipation @ TC = 50º C Derate above 50º C To...