MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF587/D
The RF Line
NPN Silicon High-Frequency
Transistor
.
.
.
designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers.
Ideal for use in CATV, MATV, and instrumentation applications.
• Low Noise Figure — NF = 3.
0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain — GU(max) = 16.
5 dB (Typ) @ f = 500 MHz • Ion Implanted • All Gold Metal System • High fT — 5.
5 GHz • Low Intermodulation Distortion: TB3 = – 70 dB DIN = 125 dB µV • Nichrome Emitter Ballast Resistors
MRF587
NF = 3.
0 dB @ 0.
5 GHz HIGH–FREQUENCY
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Vol...