DATA SHEET
MOS Field Effect Power
Transistors
2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.
0 ± 0.
3 3.
2 ± 0.
2 4.
5 ± 0.
2 2.
7 ± 0.
2
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for high current switching spplications.
www.
DataSheet4U.
com
15.
0 ± 0.
3
3 ± 0.
1 4 ± 0.
2
• Low On-Resistance RDS (on) 1 = 40mΩ Max.
(VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.
(VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.
• Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package
0.
7 ± 0.
1 2.
54
1.
3 ± 0.
2 1.
5 ± 0.
2 2.
54
13.
5MIN.
12.
0 ± 0.
2
FEATURES
2.
5 ± 0.
1 0.
65 ± 0.
1 1.
Gate 2.
Drain 3.
Source
1 2 3
MP-45F (ISOLATED TO-220...