2SK1317
2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 A...
Hitachi Semiconductor