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K1305

Hitachi
Part Number K1305
Manufacturer Hitachi
Description 2SK1305
Published Jun 17, 2016
Detailed Description 2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File K1305 PDF File

K1305
K1305

Overview
2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 100 ±20 10 40 10 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1305 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.
0 — — Forward transfer admittance |yfs| 4.
5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1.
Pulse test Typ Max Unit ——V ——V — ±10 µA — 250 µA — 2.
0 V 0.
20 0.
25 Ω 0.
25 0.
35 Ω 7.
0 — S 525 — pF 205 — pF 60 — pF 5 — ns 50 — ns 170 — ns 75 — ns 1.
2 — V 220 — ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V *1 ID = 5 A, VGS = 4 V *1 ID = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/µs See characteristic curves of 2SK1300.
3 Channel Dissipation Pch (W) 2SK1...


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