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K1307

Hitachi Semiconductor
Part Number K1307
Manufacturer Hitachi Semiconductor
Description 2SK1307
Published Jan 15, 2012
Detailed Description www.DataSheet.co.kr 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resist...
Datasheet PDF File K1307 PDF File

K1307
K1307

Overview
www.
DataSheet.
co.
kr 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 20 80 20 35 150 –55 to +150 Unit V V A A A W °C °C 2 Datasheet pdf - http://www.
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net/ www.
DataSheet.
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kr 2SK1307 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — — — — — 0.
065 0.
085 16 1300 540 160 12 100 300 150 1.
3 300 Max — — ±10 250 2.
0 0.
085 0.
12 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 50 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 I D = 10 A, VGS = 4 V *1 I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to sour...


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