www.
DataSheet4U.
com HAF1009(L), HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.
1.
00 May.
13.
2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area.
And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features www.
DataSheet4U.
com 4 4 1 1 2 3 3 • • • • Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latc...

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