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HAF1001

Hitachi Semiconductor
Part Number HAF1001
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 22, 2005
Detailed Description HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-583 A (Z) 2nd ...
Datasheet PDF File HAF1001 PDF File

HAF1001
HAF1001

Overview
HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area.
And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220AB D 4 G Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 2 S 3 1.
Gate 2.
Drain 3.
Source 4.
Drain HAF1001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS– ID I D(pulse) Note1 Ratings –60 –16 3 –15 –30 –15 Unit V V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C Pch Tch Tstg Note2 50 150 –55 to +150 Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min –3.
5 — — — — — — — –3.
5 Typ — — — — — –0.
8 –0.
35 175 — Max — –1.
2 –100 –50 –1 — — — –13 Unit V V µA µA µA mA mA °C V Vi = –8V, VDS = 0 Vi = –3.
5V, VDS = 0 Vi = –1.
2V, VDS = 0 Vi = –8V, VDS = 0 Vi = –3.
5V, VDS = 0 Channel temperature Test Conditions 2 HAF1001 Electrical Characteristics (Ta = 25°C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I ...


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