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RN1310,RN1311
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1310,RN1311
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2310, RN2311 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 100 150 −55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.
006g...