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RN1306

Toshiba Semiconductor
Part Number RN1306
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Swi...
Datasheet PDF File RN1306 PDF File

RN1306
RN1306

Overview
RN1301~RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2301~RN2306 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1301~1306 RN1301~1306 RN1301~1304 RN1305, 1306 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 10 5 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
006g ― SC-70 2-2E1A Unit V V V mA mW °C °C 1 2001-06-07 RN1301~RN1306 Electrical Characteristics (Ta = 25°C) Characteristic Collecto...


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