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RN1309

Part Number	RN1309
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Apr 11, 2018
Detailed Description	RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Switching, Inverter Circ...
Datasheet	RN1309 PDF File

Overview

RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2307~RN2309 Equivalent Circuit and Bias Resistor Values Type No.
R1 (kΩ) RN2207 RN2208 RN2209 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1307 RN1308 RN1309 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 6 7 15 100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
006g Unit V V V mA mW °C °C ― SC-70 2-2E1A 1 2001-06-07 RN1307~RN1309 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1307 Emitter cut-off current RN1308 RN1309 ...

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