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RN1312,RN1313
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1312,RN1313
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2312, RN2313 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 100 100 150 125 −55~125 Unit V V V mA mA mW °C °C
JEDEC EIAJ ...