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Part Number
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FDMC2610 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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N-Channel UltraFET Trench MOSFET |
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Published
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Nov 22, 2006 |
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Detailed Description
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www.DataSheet4U.com
FDMC2610 N-Channel UltraFET Trench® MOSFET
September 2006
FDMC2610 N-Channel UltraFET Trench® MOS...
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Datasheet
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FDMC2610
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Overview
www.
DataSheet4U.
com
FDMC2610 N-Channel UltraFET Trench® MOSFET
September 2006
FDMC2610 N-Channel UltraFET Trench® MOSFET
200V, 9.
5A, 200mΩ Features General Description
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.
2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.
5A Low Profile - 1mm max in a MicroFET 3.
3 x 3.
3 mm RoHS Compliant
tm
Application
DC - DC Conversion
Bottom
Top
5
6
7
8 D D D
D
5 6 7
G S S S
4 3 2 1
4
3
2
1
8
MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, T...
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