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FDMC2674

Fairchild Semiconductor
Part Number FDMC2674
Manufacturer Fairchild Semiconductor
Description N-Channel UltraFET Trench MOSFET
Published Nov 22, 2006
Detailed Description www.DataSheet4U.com FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 22...
Datasheet PDF File FDMC2674 PDF File

FDMC2674
FDMC2674

Overview
www.
DataSheet4U.
com FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 220V, 1A, 366mΩ Features General Description „ Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A „ Typ Qg = 12.
7nC at VGS = 10V „ Low Miller charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability ( Single Pulse and Repetitive Pulse) „ RoHS Compliant tm UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Operating and Storage Temperature Ratings 220 ±20 1 13.
8 (Note 3) 13 2.
4 -55 to 150 Units V V A mJ W °C Thermal Characteristics RθJA RθJA Thermal Resistance , Junction to Ambient Thermal Resistance , Junction to Ambient (Note 1a) (Note 1b) 52 108 °C/W °C/W Package Marking and Ordering Information Device Marking FDMC2674 Device FDMC2674 Package MLP 3.
3 x 3.
3 1 Reel Size 7’’ Tape Width 12mm Quantity 3000 units www.
fairchildsemi.
com ©2006 Fairchild Semiconductor Corporation FDMC2674 Rev.
E FDMC2674 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 176V, VGS = 0V VGS = ±20V, 220 248 1 ±100 V mV...


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