www.
DataSheet4U.
com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 180N10 IXFX 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mW trr £ 250 ns Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 .
.
.
+150 150 -55 .
.
.
+150 300 0.
...

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