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IXFK180N10

IXYS Corporation
Part Number IXFK180N10
Manufacturer IXYS Corporation
Description Power MOSFETs
Published Jan 19, 2007
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID...
Datasheet PDF File IXFK180N10 PDF File

IXFK180N10
IXFK180N10

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C IXFK 180N10 IXFX 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mW trr £ 250 ns Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 .
.
.
+150 150 -55 .
.
.
+150 300 0.
9/6 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.
in.
6 10 g g PLUS 247TM (IXFX) G D (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped ...


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