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MRF904
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
• • • Silicon
NPN, high Frequency, To-72 packaged,
Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.
5 dB (typ) @ f = 450 MHz
2
•
High FT - 4 GHz (typ) @ IC = 15 mAdc
1 4
3
1.
Emitter 2.
Base 3.
Collector 4.
Case
TO-72
DESCRIPTION:
Designed primarily for use IN High Gain, low noise general purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage...