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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.
2+/-0.
05
(0.
22) (0.
22) (0.
25)
RoHS Compliance,Silicon MOSFET Power
Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type
transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
DRAWING
4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05
6.
0+/-0.
15
1
4.
9+/-0.
15 1.
0+/-0.
05
FEATURES
High power gain: Pout2W, Gp16dB @Vdd=7.
2V,f=175MHz,520MHz High Efficiency:65%typ.
(175MHz) High Efficiency:65%typ.
(520MHz)
2
3
(0.
25)
INDEX MARK (Gate)
0.
2+/-0.
05
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
0.
9+/-0.
1
APPLIC...