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RD02MUS2

Mitsubishi Electric
Part Number RD02MUS2
Manufacturer Mitsubishi Electric
Description RoHS Compliance
Published Jul 12, 2007
Detailed Description MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.2...
Datasheet PDF File RD02MUS2 PDF File

RD02MUS2
RD02MUS2

Overview
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.
2+/-0.
05 (0.
22) (0.
22) (0.
25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
This device have an interal monolithic zener diode from gate to source for ESD protection.
OUTLINE DRAWING 4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 6.
0+/-0.
15 1 4.
9+/-0.
15 1.
0+/-0.
05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.
2V,f=175MHz,520MHz •High Efficiency:65%typ.
(175MHz) •High Efficiency:65%typ.
(520MHz) •Integrated gate protection diode 3 (0.
25) INDEX MARK (Gate) 0...


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