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RD02MUS1B

Mitsubishi Electric Semiconductor
Part Number RD02MUS1B
Manufacturer Mitsubishi Electric Semiconductor
Description Silicon MOSFET Power Transistor
Published Nov 5, 2012
Detailed Description < Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTL...
Datasheet PDF File RD02MUS1B PDF File

RD02MUS1B
RD02MUS1B

Overview
< Silicon RF Power MOS FET (Discrete) > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING 4.
6+/-0.
05 3.
3+/-0.
05 0.
8+/-0.
05 RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
6.
0+/-0.
15 0.
2+/-0.
05 1 4.
9+/-0.
15 1.
0+/-0.
05 2 3 INDEX MARK (Gate) (0.
22) (0.
25) (0.
25) FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.
2V,f=175MHz, 520MHz High Efficiency: 65%typ.
(175MHz) High Efficiency: 65%typ.
(520MHz) 0.
2+/-0.
05 0.
9+/-0.
1 Terminal No.
1.
Drain (output) 2.
Source (GND) 3.
Gate (input) Note ( ):center value UNIT:mm...


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