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PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies 5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
39V
@VGE = 15V, IC = 5.
0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ...