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PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Extremely low voltage drop; 1.
1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications • Very Tight Vce(on) distribution • Industry standard TO-220AB package
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
10V
@VGE = 15V, IC = 2.
0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Lower conduction losses than many Power MOSFET''s
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC...