Part Number
|
FDD8586 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel PowerTrench MOSFET |
Published
|
Apr 2, 2007 |
Detailed Description
|
www.DataSheet4U.com
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
January 2007
FDD8586/FDU8586 N-Channel PowerTrench®...
|
Datasheet
|
FDD8586
|
Overview
www.
DataSheet4U.
com
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
January 2007
FDD8586/FDU8586 N-Channel PowerTrench® MOSFET
20V, 35A, 5.
5mΩ Features General Description
Max rDS(on) = 5.
5mΩ at VGS = 10V, ID = 35A Max rDS(on) = 8.
5mΩ at VGS = 4.
5V, ID = 33A Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
tm
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) ...
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