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FDD850N10LD

Fairchild Semiconductor
Part Number FDD850N10LD
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET + Diode
Published Aug 7, 2015
Detailed Description FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD850N10LD BoostPak (N-Channel PowerTrenc...
Datasheet PDF File FDD850N10LD PDF File

FDD850N10LD
FDD850N10LD

Overview
FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 15.
3 A, 75 mΩ Features • RDS(on) = 61 mΩ (Typ.
) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.
) @ VGS = 5.
0 V, ID = 12 A • Low Gate Charge (Typ.
22.
2 nC) • Low Crss (Typ.
42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.
Applications • LED Monitor Backlight • LED TV Backlight • LED Lighting • Consumer Appliances, DC-DC converter (Step up & Step down) 3 12 45 3 TO252-5L 1.
Gate 2.
Source 3.
Drain / Anode 4.
Cathode 5.
Cathode 1 Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDS...


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