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FDD850N10L

Fairchild Semiconductor
Part Number FDD850N10L
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDD850N10L — N-Channel PowerTrench® MOSFET FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ November 2013...
Datasheet PDF File FDD850N10L PDF File

FDD850N10L
FDD850N10L

Overview
FDD850N10L — N-Channel PowerTrench® MOSFET FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.
7 A, 75 mΩ November 2013 Features • RDS(on) = 61 mΩ ( yp.
) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.
) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ.
22.
2 nC) • Low Crss (Typ.
42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.
Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuou...


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