UTC 2SB1116/A
PNP EPITAXIAL SILICON
TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base Voltage 2SB1116 2SB1116A Collector-Emitter Voltage 2SB1116 2SB1116A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)* Collector Power Dissipation Junction Temperature Storage Temperature *PW≦10ms,Duty Cycle≦50% Vcom CEO VEBO Ic Icp Pc Tj Tstg -50 -60 -6 -1 -2 0.
75 150 -55 ~ +150 V V A A W °C °C VCBO -60 -80 V
SYMBOL
RATINGS
UNIT
ELECTRICAL CHARACTERISTICS (Ta...