2SB1132
PNP Plastic-Encapsulate
Transistors
SOT-89
1
1.
BASE 2.
COLLECTOR 3.
EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation
Junction Temperature, Storage Temperature
* Single pulse Pw = 100ms
com
Value
-40 -32 -5.
0 -1.
0 -2.
0 0.
5
150, -55 to +150
Unit Vdc Vdc Vdc A(DC) A (Pulse)* W
PC
T j , Tstg
% C
DEVICE MARKING
2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0) Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0) Emitter-...