2SB1260
PNP Plastic-Encapsulate
Transistor
SOT-89
1
1.
BASE 2.
COLLECTOR 3.
EMITTER
2
3
C) ABSOLUTE MAXIMUM RATINGS (Ta=25%
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature
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Value
-80 -80 -5.
0 1.
0 2.
0 0.
5 150, -55 to +150
Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) W
PC
T j , Tstg
% C
Device Marking
2SB1260=ZL
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -1.
0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -50 µAdc, IC=0) Collector Cut...