2SB649/2SB649A
PNP Epitaxial Planar
Transistors
P b Lead(Pb)-Free
1.
EMITTER 2.
COLLECTOR 3.
BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO V com EBO IC PD Tj Tstg -120 6.
0 -1.
5 1.
0 +150 -55 to +150 2SB649 -180 -160 2SB649A Unit V V V A W ˚C ˚C
WEITRON
http://www.
weitron.
com.
tw
1/5
21-Mar-06
2SB649/2SB649A
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = -1.
0mA, IE = 0 Collector-Base Breakdown Voltage 2SB649 IC = -...