Part Number
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M29DW128F |
Manufacturer
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ST Microelectronics |
Description
|
Flash memory |
Published
|
Apr 19, 2007 |
Detailed Description
|
M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
Feature summary
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Suppl...
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Datasheet
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M29DW128F
|
Overview
M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
Feature summary
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Supply voltage – VCC = 2.
7V to 3.
6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words – Page access: 25, 30ns – Random access: 60, 70ns Programming time – 10µs per Byte/Word typical – 4 Words / 8 Bytes Program – 32-Word Write Buffer Erase Verify Memory blocks – Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit – Parameter Blocks (at Top and Bottom)
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com
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TSOP56 (NF) 14 x 20mm
BGA
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TBGA64 (ZA) 10 x 13mm Low power consumption – Standby and Automatic Standby Hardware Block Protection ...
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