FPD1000AS
1W PACKAGED POWER PHEMT • PERFORMANCE (1.
8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Suitable for applications to 5 GHz DESCRIPTION AND APPLICATIONS
SEE PACKAGE OUTLINE FOR MARKING CODE
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The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT), optimized for power applications in L-Band.
The surface-mount package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitt...