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FPD1000V

Filtronic
Part Number FPD1000V
Manufacturer Filtronic
Description 1W POWER PHEMT
Published May 11, 2007
Detailed Description PRELIMINARY • FEATURES (1.8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Outpu...
Datasheet PDF File FPD1000V PDF File

FPD1000V
FPD1000V

Overview
PRELIMINARY • FEATURES (1.
8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER PHEMT GATE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.
The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.
• ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion ΓS and ΓL tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| ΘCC rd Symbol P1dB G1dB MSG PAE IM3 Test Conditions VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10 V; IDS = 200mA PIN = 0dBm, 50Ω system VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 mA POUT = 19 dBm (single-tone level) VDS = 1.
3 V; VGS = 0 V VDS = 1.
3 V; VGS ≅ +1 V VDS = 1.
3 V; VGS = 0 V VGS = -3 V VDS = 1.
3 V; IDS = 2.
4 mA IGS = 2.
4 mA IGD = 2.
4 mA See Note on following page Min 30 14.
5 Typ 31 16.
0 20 50 Max Units dBm RF SPECIFICATIONS MEASURED AT f = 1.
85 GHz USING CW SIGNAL dB % -46 480 650 1100 720 20 0.
7 6 20 0.
9 8 22 22 -44 720 dBc mA mA mS 50 1.
4 ...


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