Part Number
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T431616E |
Manufacturer
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TMT |
Description
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(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
Published
|
Jul 9, 2007 |
Detailed Description
|
tm
TE CH
T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode:...
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Datasheet
|
T431616E
|
Overview
tm
TE CH
T431616D/E
SDRAM
FEATURES
Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Individual byte controlled by LDQM and UDQM • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • JEDEC standard +3.
3V±0.
3V power supply • Interface: LVTTL • 50-pin 400 mil plastic TSOP II package • 60-ball, 6.
4x10.
1mm VFBGA package • Lead Free Package available for both TSOP II and VFBGA •Low Oper...
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