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T431616B

Part Number	T431616B
Manufacturer	TMT
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Published	Jul 9, 2007
Detailed Description	tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible w...
Datasheet	T431616B PDF File

Overview

tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.
7 to +3.
6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key programs - CAS Latency ( 1 & 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) Available package type in 50 pin TSOP(II) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle .
Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be us...

Similar Datasheet

T431616A 1M x 16 SDRAM - TM
T431616B 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616D (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT
T431616E (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM - TMT

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