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T431616C

Part Number	T431616C
Manufacturer	TMT
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Published	Jul 9, 2007
Detailed Description	tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL c...
Datasheet	T431616C PDF File

Overview

tm • • • • • TE CH T431616C SDRAM FEATURES 3.
3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 32ms refresh period (2K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type : - 50 pin TSOP(II)/lead-free • Operating temperature : - 0 ~ +70 °C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .
Range of operating frequencies , programmable ...

Similar Datasheet

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