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General Purpose
Transistor
SMD Diodes Specialist
MMBT3904-G (
NPN)
RoHS Device
Features
-Epitaxial planar die construction -As complementary type, the
PNP transistor MMBT3906-G is recommended
0.
056 (1.
40) 0.
047 (1.
20)
SOT-23
0.
119 (3.
00) 0.
110 (2.
80)
3
1
0.
083 (2.
10)
2
0.
066 (1.
70) 0.
006 (0.
15) 0.
002 (0.
05) 0.
103 (2.
60) 0.
086 (2.
20)
Collector 3
0.
044 (1.
10) 0.
035 (0.
90)
1 Base
0.
006 (0.
15) max 0.
020 (0.
50) 0.
013 (0.
35) 0.
007 (0.
20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings(at TA=25 C unless otherwise noted)
Parameter
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Col lec tor di ssi...