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MMBT3904

Infineon Technologies AG
Part Number MMBT3904
Manufacturer Infineon Technologies AG
Description NPN Silicon Switching Transistors
Published May 10, 2014
Detailed Description SMBT3904...MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter s...
Datasheet PDF File MMBT3904 PDF File

MMBT3904
MMBT3904

Overview
SMBT3904.
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MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.
1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906.
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MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBT3904/MMBT3904 SMBT3904S Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- Marking s1A s1A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO IC Ptot Value 40 60 6 200 330 250 Unit V mA mV TS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature Thermal Resistance Parameter Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 140 °C Junction - soldering SMBT3904S point1) Unit K/W SMBT3904/MMBT3904 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2012-08-21 http://www.
Datasheet4U.
com SMBT3904.
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MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 IC = 1 mA, IB = 0 Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO ICBO hFE 60 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V 40 70 100 60 30 VCEsat - 300 V 0.
2 0.
3 0.
85 0.
95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Pulse 0.
65 - test: t < 300µs; D < 2% 2 2012-08-21 SMBT39...


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