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MMBT3904

STMicroelectronics
Part Number MMBT3904
Manufacturer STMicroelectronics
Description SMALL SIGNAL NPN TRANSISTOR
Published May 9, 2005
Detailed Description ® MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT3904 s Marking 34 s s s SILICON EPITAXIAL PLANAR ...
Datasheet PDF File MMBT3904 PDF File

MMBT3904
MMBT3904

Overview
® MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT3904 s Marking 34 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max.
Operating Junction Temperature o Value 60 40 6 200 350 -65 to 150 150 Unit V V V mA mW o o C C June 2002 1/4 MMBT3904 THERMAL DATA R thj-amb • Thermal Resistance Junction-Ambient 2 Max 357.
1 o C/W • Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min.
Typ.
Max.
50 50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 µ A 60 V V (BR)EBO I E = 10 µ A 6 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 10 mA I C = 50 mA I C = 10 mA I C = 50 mA IC IC IC IC IC = = = = = 0.
1 mA 1 mA 10 mA 50 mA 100 mA I B = 1 mA I B = 5 mA I B = 1 mA I B = 5 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V f = 1 MHz f = 1MHz 0.
65 60 80 100 60 30 250 270 4 18 5 0.
2 0.
2 0.
85 0.
95 V V V V 300 fT C CBO C EBO NF td tr Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Delay Time Rise Time I C = 10 mA V CE = 20 V f = 100 MHz IE = 0 IC = 0 V CB = 10 V V EB ...


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