HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.
0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency
LPD200
GATE BOND PAD (2X)
DRAIN BOND PAD (2X)
SOURCE BOND PAD (2x) DIE SIZE: 12.
6X10.
2mils (320x260 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 3.
3X2.
6 mils (85x65 µm)
•
DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 200 µ m
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resista...