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LPD200

Filtronic Compound Semiconductors
Part Number LPD200
Manufacturer Filtronic Compound Semiconductors
Description HIGH PERFORMANCE PHEMT
Published Mar 22, 2005
Detailed Description HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0...
Datasheet PDF File LPD200 PDF File

LPD200
LPD200

Overview
HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.
0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.
6X10.
2mils (320x260 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 3.
3X2.
6 mils (85x65 µm) • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 200 µ m Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynamic range.
The LPD200 also features Si3 N4 passivation and is available in various packages, such as ceramic P70 and other plastic packages.
Typical applications include use in low noise, broadband amplifiers.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude Thermal Resistivity frequency=18 GHz Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| |VBDGD| ΘJC Test Conditions VDS = 2 V; VGS = 0 V VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 1 mA IGS = 1 mA IGD = 1 mA -0.
25 -6 -8 50 Min 40 19 11 Typ 60 21 12.
5 55 125 70 1 -0.
8 -7 -9 260 10 -1.
5 Max 85 Units mA dBm dB % mA mS µA V V V °C/W Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.
filss.
com Revised: 1/22/01 Email: sales@filss.
com HIGH PERFORMANCE PHEMT • ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate...


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