Part Number
|
G1333 |
Manufacturer
|
GTM |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 17, 2007 |
Detailed Description
|
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :
G1333
P-CHANNEL ENHANCEMENT MODE PO...
|
Datasheet
|
G1333
|
Overview
www.
DataSheet4U.
com
Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :
G1333
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 800m -550mA
The G1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Description
*Simple Gate Drive *Small Package Outline *Fast Switching Speed
Features
Package Dimensions
REF.
A B C D E F
Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55
REF.
G H K J L M
Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Cur...
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