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G1333

GTM
Part Number G1333
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 17, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : G1333 P-CHANNEL ENHANCEMENT MODE PO...
Datasheet PDF File G1333 PDF File

G1333
G1333

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : G1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA The G1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Description *Simple Gate Drive *Small Package Outline *Fast Switching Speed Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 12 -550 -440 2.
5 1.
0 0.
008 -55 ~ +150 Ratings 125 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W 1/4 ISSUED DATE :2005/03/10 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
-20 -0.
5 Typ.
0.
01 1 1.
7 0.
3 0.
4 5 8 10 2 66 25 20 Max.
-1.
2 100 -1 -10 600 800 1000 2.
7 105.
6 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-550mA VGS= 12V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-10V, ID=-550mA VGS=-4.
5V, ID=-500mA VGS=-2.
5V, ID=-300mA ID=-500mA VDS=-16V VGS=-4.
5V VDS=-10V ID=-500mA VGS=-5V RG=3.
3 RD=20 VGS=0V VDS=-10V f=1.
0MHz Static Drain-Source On-Resistance RDS(ON) - Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn...


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