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G1332E

GTM
Part Number G1332E
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 17, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C G1332E N-CHANNEL ENHANCE...
Datasheet PDF File G1332E PDF File

G1332E
G1332E

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA Description The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
*Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 ±5 600 470 2.
5 1.
0 0.
008 -55 ~ +150 Value 125 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W G1332E Page: 1/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
20 0.
5 Typ.
0.
02 1 1.
3 0.
3 0.
5 4 10 15 2 38 17 12 Max.
1.
2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=600mA VGS= ±5V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.
5V, ID=600mA VGS=2.
5V, ID=400mA ID=600mA VDS=16V VGS=4.
5V VDS=10V ID=600mA VGS=10V RG=3.
3 RD=16.
7 VGS=0V VDS=10V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2...


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