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TN2010T
N-Channel Enhancement-Mode MOSFET
Transistor
Product Summary
V(BR)DSS Min (V)
200
rDS(on) Max (W)
11
VGS(th) (V)
0.
8 to 3.
0
ID (A)
0.
12
Features
D D D D D Low On-Resistance: 9.
5 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability
Benefits
D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away”
Applications
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control
TO-236 (SOT-23)
G
1 3 D
S
2
Top View TN2...